high-performance TOF-SIMS with SPM (IMWS-13.1) - PR876572-2690-P

1 High-Performance Time-of-Flight (TOF) Secondary Ion Mass Spectrometry (SPM) with SPM (IMWS-13.1) The Fraunhofer Institute for Microstructure of Materials and Systems IMWS is a method-oriented Fraunhofer Institute specializing in materials science and engineering. Fraunhofer IMWS serves as a contact point for industry and public sector clients for all questions concerning the microstructure of materials and systems - with the aim of increasing material efficiency and cost-effectiveness while conserving resources. Within the framework of the EU Chips Act, Fraunhofer IMWS plans to acquire a combination instrument that offers the possibility of coupled sample analysis using time-of-flight secondary ion mass spectrometry (ToF-SIMS) and scanning probe microscopy (SPM) of the same sample location in situ. A device is required for trace analysis at micrometer-scale contact interfaces of highly integrated 2.5/3D and QMI devices. This device is intended to detect the elemental composition and/or the lateral and spatial distribution of elements and chemical compounds on sample surfaces and microstructures, with the primary goal of detecting (trace) impurities on and within samples, as well as identifying potential interdiffusion processes. Due to its inherently high sensitivity for fast-acting elements and chemical compounds, Time-of-Flight (ToF) SIMS technology has been identified as a suitable method for the virtually non-destructive detection of trace elements and (including organic) impurities on functional structures, as TOF SIMS enables the detection of trace elements in the ppm-ppb range. A lateral resolution of < 100 nm is required for surface analysis. The ability to visualize the planar distribution of the elements and compounds detected by the analysis must also be provided. Furthermore, it must be possible to register and three-dimensionally represent the distribution of chemical elements and compounds within the sample volume through successive sample removal during acquisition using depth profilometric techniques. Samples with a heterogeneous 3D structure pose a significant challenge for analysis because the removal rate is material-dependent, and additional challenges such as shadowing and roughening effects limit the interpretation of 3D datasets from such demanding samples. Therefore, an instrument is needed that offers a combination of ToF-SIMS and SPM within the same platform in situ. A high feed rate accuracy of < 1 µm between the SPM and ToF-SIMS depth profiling positions is required to analyze the actual sample topography. The goal is to combine the 3D ToF-SIMS datasets with the SPM topography information to generate topography-corrected 3D datasets for heterostructures or components. For the analysis of organic sample systems or complex, integrated heterogeneous inorganic-organic sample systems, the option of gentle depth profiling is also desired - in the sense that mixing or dissolution of (organic) sample components induced by the energy input of the atomizing ion species is minimized. Furthermore, it should be possible to transfer samples with a 10-inch diameter into the instrument without prior reduction in size. Options: see specifications