Photolumineszenz-Mapper-NIR - PR1150863-3240-W

Photoluminescences is a versaille method for characterisation of direct semiconductors. In epitaxy typically whole wafers get PL-mapped to achive information on bandgap, uniformity, layer thickness or cavity dip. The desired tool is capable to measure in a spectral range from 800-2150nm, due to the (AlInGa)(AsP)-heterostructures which are matter of investigations. The setup is capable of mapping entire 2 - 6 inch (50mm - 150mm) wafers. Options: 1. Excitation density tuning for Laser 1 (automized) 2. Laser 2 (DPSS) for InGaAs-contact bleach out for layers with thickness 50 - 200nm 3. Sample holder: Flexible sample positioning on entire chuck with vacuum clamping 4. Sample holder: Mount for DataRay BladeCam2