The University of Oslo is establishing a new research environment in neuromorphic hardware for energy-efficient artificial intelligence. The activity will connect materials development at the Centre for Materials Science and Nanotechnology (SMN) with expertise in circuit and system design at the Department of Informatics. A central need is the ability to electrically characterize devices from early-stage materials and device development to small arrays and demonstrators. This includes ferroelectric tunnel junctions (FTJs), ferroelectric field-effect transistors (FeFETs), resistive memory devices, and other device concepts relevant to neuromorphic electronics. The requirement consists of two technical main parts (Lot 1 and Lot 2): 1: A modular electrical measurement and characterization device 2: A semi‑automatic probe station with temperature control